RU30C30M

RU30C30M Complementary Advanced Power MOSFET Features N-Channel 30V/30A, RDS (ON) =7.5mΩ(Typ.) @ VGS=10V RDS (ON) =10mΩ(Typ.) @ VGS=4.5V P-Channel -30V/-30A, RDS (ON) =13mΩ (Typ.) @ VGS=-10V RDS (ON) =22mΩ (Typ.) @ VGS=-4.5V Fast Switching Speed ESD Protected Low gate Charge Lead Free and Green Devices Available (RoHS Compliant) Applications Load Switch Pin Description D1 D1D2D2 S1 G1 S2 G2 pin1 PDFN5060 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pu...