RU3020H

RU3020H N-Channel Advanced Power MOSFET MOSFET Features 30V/12A, RDS (ON) =9.5m (Typ.) @ VGS=10V RDS (ON) =15m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Available Pin Description SOP-8 Applications Power Management in Notebook Computer, and DC-DC Converters in Networking Systems. Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RJA Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Rating 30 ±20 150 -55 to 1...