MDS3754A

MDS3754A – P-Channel Trench MOSFET MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description The MDS3754A uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. 5(D) 6(D) 7(D) 8(D) Features  VDS = -40V  ID = -6.0 @ VGS = -10V  RDS(ON) <45m @ VGS = -10V <60m @ VGS = -4.5V Applications  Inverters  General purpose applications D 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (TC =25o) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -40 ±20 -6.0 -50 2.5 32 -55~+150 Unit V V A A W mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient The...