MDD3752A

MDD3752A – P-Channel Trench MOSFET MDD3752A P-Channel Trench MOSFET, -40V, -43A, 17mΩ General Description The MDD3752A uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features  VDS = -40V  ID = -43A @VGS = -10V  RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V Applications  Inverters  General purpose applications D G Absolute Maximum Ratings (TC =25o) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (Note 2) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC S ...