MDP1932

MDP1932– Single N-Channel Trench MOSFET 80V MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description The MDP1932 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1932 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 120A @VGS = 10V  RDS(ON) < 3.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Dec. 2013. Version 1.1 1 G S Sy...