MDF1903

MDF1903 – Single N-Channel Trench MOSFET 100V MDF1903 Single N-channel Trench MOSFET 100V, 12A, 110mΩ ㄹ General Description The MDF1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1903 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 12A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 115mΩ @VGS = 6.0V 100% UIL Tested D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case TC=25oC TC=70oC TC=25oC TC=70oC Feb. 2011. Version 1.0 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 100 ±20 12 ...