MMQ60R115P

MMQ60R115P Datasheet MMQ60R115P 600V 0.115Ω N-channel MOSFET  Description MMQ60R115P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.115 3 33 79  Features Unit V Ω V A nC GDS D G S  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Ordering Information Order Code MMQ60R115PTH Marking 60R115P Temp. Range -55 ~ 150oC Package TO-247 Packing Tube RoHS Status Compliant Nov. 2021 Revision 1.0 1 Magnachip Semiconductor Ltd. MMQ60R115P Datasheet  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current (1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness (5) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj 600 ±30 33 20.9 99 255 ...