DatasheetsPDF.com

MMIS60R750P Dataheets PDF



Part Number MMIS60R750P
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MMIS60R750P DatasheetMMIS60R750P Datasheet (PDF)

MMIS60R750P Datasheet MMIS60R750P 600V 0.75Ω N-channel MOSFET  Description MMIS60R750P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.75 3 5.7 15 Un.

  MMIS60R750P   MMIS60R750P



Document
MMIS60R750P Datasheet MMIS60R750P 600V 0.75Ω N-channel MOSFET  Description MMIS60R750P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.75 3 5.7 15 Unit V Ω V A nC  Package & Internal Circuit D GDS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMIS60R750PTH Marking 60R750P Temp. Range -55 ~ 150℃ Package TO-251-VS Jun. 2021 Revision 1.2 1 Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd. MMIS60R750P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj 600 ±30 5.7 3.6 17.1 48 75 50 15 -55 ~150 150 V V A A A W mJ V/ns V/ns ℃ ℃ TC=25℃ TC=100℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 2.6 62.5 Unit ℃/W ℃/W Jun. 2021 Revision 1.2 2 Magnachip Semiconductor Ltd. MMIS60R750P Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min. Typ. Max. Unit Test Condition V(BR)DSS 600 - - V VGS = 0V, ID=0.25mA VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA IDSS - - 1 μA VDS = 600V, VGS = 0V IGSS - - 100 nA VGS = ±30V, VDS =0V RDS(ON) - 0.68 0.75 Ω VGS = 10V, ID = 2.0A  Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Energy Related (3) Turn On Delay Time Ciss Coss Crss Co(er) td(on) - 575 - 430 - 20 - 16 - 11 - VDS = 25V, VGS = 0V, pF f = 1.0MHz VDS = 0V to 480V, VGS = 0V,f = 1.0MHz Rise Time Turn Off Delay Time tr td(off) - 31 - 37 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 5.7A Fall Time tf - 23 - Total Gate Charge Gate – Source Charge Gate – Drain Charge Qg - 15 - Qgs - 4.5 - nC VGS = 10V, VDS = 480V, ID = 5.7A Qgd - 6 - Gate Resistance RG - 4.5 - Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Jun. 2021 Revision 1.2 3 Magnachip Semiconductor Ltd. MMIS60R750P Datasheet  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter Continuous Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Symbol Min. Typ. Max. Unit Test Condition ISD - - 5.7 A VSD - - 1.4 V ISD = 5.7 A, VGS = 0 V trr - 255 - ns ISD = 5.7 A Qrr - 1.7 - μC di/dt = 100 A/μs VDD = 100 V Irrm - 13.1 - A Jun. 2021 Revision 1.2 4 Magnachip Semiconductor Ltd. MMIS60R750P Datasheet Jun. 2021 Revision 1.2 5 Magnachip Semiconductor Ltd. MMIS60R750P Datasheet Jun. 2021 Revision 1.2 6 Magnachip Semiconductor Ltd. MMIS60R750P Datasheet Jun. 2021 Revision 1.2 7 Magnachip Semiconductor Ltd.  Test Circuit Same type as DUT 100KΩ 10V 1mA 10V DUT + VDS - Fig15-1. Gate charge measurement circuit MMIS60R750P Datasheet VGS 10V Qgs Qg Qgd Charge Fig15-2. Gate charge waveform DUT IS Rg 10KΩ Vgs ± 15V IF + - VDS L Same type as DUT + VDD - Fig16-1. Diode reverse recovery test circuit ID DUT Rg 25Ω VDS RL trr IFM 0.5 IRM ta tb di/dt 0.75 IRM 0.25 IRM IRM VR VRM(REC) Fig16-1. Diode reverse recovery test waveform VDS 90% Vgs tp + VDD - 10% VGS Fig17-1. Switching time test circuit for resistive load IAS DUT VDS Rg L Td(on) tr ton Td(off) tf toff Fig17-2. Switching time waveform tp IAS BVDSS tAV Vgs tp VDD + VDD - Fig18-1. Unclamped inductive load test circuit VDS(t) Rds(on) * IAS Fig18-2. Unclamped inductive waveform Jun. 2021 Revision 1.2 8 Magnachip Semiconductor Ltd.  Physical Dimension TO-251-VS (3L) MMIS60R750P Datasheet n Jun. 2021 Revision 1.2 Note : Package body size, length and width do not include mold f.


MMFT65R195P MMIS60R750P MMD60R750P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)