CET0215

CET0215 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 150 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 2 IDM 8 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2011.Nov http://www.cet-mos.com CET0215 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltag...