CEN2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.7A, RDS(ON) = 110mΩ @VGS = -4.5V. RDS(ON) = 160mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23-T package.
D
DS G
SOT-23-T
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter...
