CEM7808
Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY
FEATURES
30V, 6.2A, RDS(ON) = 33...
CEM7808
Enhancement Mode Field Effect
Transistor (2 X N and 2 X P Channel) PRELIMINARY
FEATURES
30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
P1S P2S
P1G
P2G
N1D P1D
N2D P2D
N1G
N2G
P1G 8
N1S N2S
P1S N2D P2S P2D
76
P2G 5
SO-8
1
1234
N1G
N1D P1D
N1S N2S
N2G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage Gate-Source Voltage
VDS 30 -30
VGS ±20 ±20
Drain Current-Continuous
ID 6.2 -4.8
Drain Current-Pulsed a
IDM 24.8 -19.2
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units...
