VDS
1200 V
C2M0280120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C RDS(on)
11 A 280 mΩ
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free...
