MT2306

ञᇢӑ᳝݀ৌ Mos-Tech Semiconductor Co.,LTD. N-Channel Enhancement Mode Field Effect Transistor MT2306 FEATURES ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requirement ƽSOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ 20V 4.0A 46 @ VGS=10V 65@ VGS=4.5V NOTE˖The MT2306 is available in a lead-free package D S G D G S ABSOLUTE MAXIMUM RATINGS˄TA=25ćunless otherwise noted˅ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Symbol VDS VGS ID Limit 20 12 4.0 - Pulse d b IDM 10 Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.25 1.25 -55 to 150 Unit V V A A A W ć THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambient Rth JA 100 ć/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,LTD. MT2306...