MT2312

Mos-Tech Semiconductor Co.,LTD. N-Channel Enhancement Mode Field Effect Transistor MT2312 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4.5A 30@ VGS=4.5V 50@ VGS=2.5V NOTE：The MT2312 is available in a lead-free package D S G D G S ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 20 ±12 3.6 - Pulse d b IDM 12 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.25 1.25 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,LTD....