MT2305

Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT2305 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -20V -4.6A 85@ VGS=-4.5V 105 @ VGS=-2.5V NOTE：The MT2305 is available in a lead-free package D S G S G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -20 ±12 -4.6 - Pulse d b IDM -12 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.25 1.25 -55 to 150 Unit V V A A A W ← THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconduct...