MT1803

MOS-TECH Semiconductor Co.,LTD N-Channel Enhancement Mode Field Effect Transistor MT1803 Features： VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Applications： Switching Applications. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range ℃Tc=25 ℃Tc=25 Thermal Resistance Ratings Symbol Parameter RthJA Maximum Junction-to-Ambient Notes: ≦1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec. Rev1.0 Jan-30-2013 Ratings 30 20 60 160 40 50 -55 to 150 Units V V A A A W ℃ Ratings 52 Unit ℃/W www.mtsemi.com Page 1 of 8 MOS-TECH Semiconduc...