MT9435L

Mos-Tech Semiconductor Co.,LTD. MT9435L P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT9435L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -12A 43@ VGS=-10V 70 @ VGS=-4.5V DS G S G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -12 - Pulse d b IDM -42 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.7 50 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,...