MT3208

MT3208 N-Channel MOSFET MOS-TECH Semiconductor Co.,LTD MT3208 80V N-Channel MOSFET Features 85A, 80V, RDS(on) = 0.0068Ω @VGS = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast sitching Improved dv/dt capability Description These N-Channel enha ncement mode power field effect transistors are produ ced using mos-tech’s pr oprietary, planar stripe, DMOS technology. This advanced technology has been e specially tailored to minimize on- state resistan ce, provide super ior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electron ic lamp ballast based on half bridge topology. D GDS TO-220 G Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - ...