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HY3610P

HOOYI

N-Channel Enhancement Mode MOSFET

HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 1...


HOOYI

HY3610P

File Download Download HY3610P Datasheet


Description
HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY3610 YYÿ XXXJWW G Package Code P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by...




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