N-Channel Enhancement Mode MOSFET
HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 100V/160A
RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V
• 1...
Description
HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
100V/160A
RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G D S
D
Applications
Switching application Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
P HY3610
YYÿ XXXJWW G
Package Code
P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by...
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