Document
Dual General Purpose Transistor
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.
Features
• hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • AEC−Q101 Qualified and PPAP Capable − NSVT3904DXV6T1G • NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge
HBM MM
VCEO VCBO VEBO
IC ESD
40 60 6.0 200 >16000 >2000
Vdc Vdc Vdc mAdc
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST/NSV3904DXV6
MARKING DIAGRAM
SOT−563
CASE 463A
MA M G
1
STYLE 1
G 1
MA = Device Code M = Date Code
G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NST3904DXV6T1G SOT−563 (Pb−Free)
4000/Tape & Reel
NSVT3904DXV6T1G SOT−563 (Pb−Free)
4000/Tape & Reel
NST3904DXV6T5G SOT−563 (Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2020 − Rev. 8
1
Publication Order Number: NST3904DXV6T1/D
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
THERMAL CHARACTERISTICS Characteristic
(One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1)
Thermal Resistance Junction-to-Ambient (Note 1)
Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad
Symbol PD
RqJA
Symbol PD RqJA
TJ, Tstg
Max 357 2.9
350
Max 500 4.0 250 −55 to +150
Unit mW mW/°C
°C/W
Unit mW mW/°C °C/W °C
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NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc) (.