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NSVT3904DXV6T1G Dataheets PDF



Part Number NSVT3904DXV6T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistor
Datasheet NSVT3904DXV6T1G DatasheetNSVT3904DXV6T1G Datasheet (PDF)

Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies .

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Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • AEC−Q101 Qualified and PPAP Capable − NSVT3904DXV6T1G • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge HBM MM VCEO VCBO VEBO IC ESD 40 60 6.0 200 >16000 >2000 Vdc Vdc Vdc mAdc V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) NST/NSV3904DXV6 MARKING DIAGRAM SOT−563 CASE 463A MA M G 1 STYLE 1 G 1 MA = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NST3904DXV6T1G SOT−563 (Pb−Free) 4000/Tape & Reel NSVT3904DXV6T1G SOT−563 (Pb−Free) 4000/Tape & Reel NST3904DXV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 April, 2020 − Rev. 8 1 Publication Order Number: NST3904DXV6T1/D NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad Symbol PD RqJA Symbol PD RqJA TJ, Tstg Max 357 2.9 350 Max 500 4.0 250 −55 to +150 Unit mW mW/°C °C/W Unit mW mW/°C °C/W °C www.onsemi.com 2 NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (.


NST3904DXV6T1G NSVT3904DXV6T1G NST3904DXV6T5G


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