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MBRS130LT3

ON Semiconductor

Schottky Power Rectifier

MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a...


ON Semiconductor

MBRS130LT3

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Description
MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) Small Compact Surface Mountable Package with J−Bend Leads Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Pb−Free Package is Available Mechanical Characteristics Case: Epoxy, Molded Weight: 100 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C ...




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