Power MOSFET
www.vishay.com
SiHA25N60EFL
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode and Low Gate Charge
Thin-Lead...
Description
www.vishay.com
SiHA25N60EFL
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode and Low Gate Charge
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
75 17 19 Single
0.127
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
FEATURES
Reduced figure-of-merit (FOM): Ron x Qg
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM Increased robustness due to low Qrr Low input capacitance (Ciss) Reduced switching and conduction losses
Available
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Telecommunications
- Server and telecom power supplies Computing
- ATX power supplies Industrial
- Welding - Induction heating - Battery chargers - Uninterruptible power supplies (UPS) Renewable energy - String PV inverters
Thin-Lead TO-220 FULLPAK SiHA25N60EFL-E3 SiHA25N60EFL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) e
Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c
VGS at...
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