SI7617DN

New Product P-Channel 30-V (D-S) MOSFET Si7617DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.0123 at VGS = - 10 V 0.0222 at VGS = - 4.5 V ID (A)d, g - 35 - 35 PowerPAK® 1212-8 Qg (Typ.) 20.5 nC 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7617DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100% Rg Tested 100% UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Notebook Battery Charging Notebook Adapter Switch G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L...