SI7615ADN

www.vishay.com Si7615ADN Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View -20 0.0044 0.0060 0.0098 59 -35 Single FEATURES TrenchFET® Gen III p-channel power MOSFET 100 % Rg and UIS tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS Adaptor switch Battery switch Load switch S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 Si7615ADN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) Continuous source-drain diode current Avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT -20 ± 12 -35 a -35 a -22.1 b, c -17.6 b, c -80 -35 a -3.3 b, c -20 20 52 33 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT M...