Power MOSFET
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated l Lead-Free
D D G...
Description
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated l Lead-Free
D D G
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
PD-95240
Si3443DVPbF
HEXFET® Power MOSFET
A 1 6D
VDSS = -20V
2 5D
3 4S
Top View
RDS(on) = 0.065Ω
TSOP-6
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
EAS VGS TJ, TSTG
Parameter Drain- S...
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