Schottky Barrier Diode
RBR30T40ANZ
Application General rectification
Dimensions (Unit : mm)
4.5±00..31
10.0±00..31
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Schottky Barrier Diode
RBR30T40ANZ
Application General rectification
Dimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Datasheet Structure
15.0±00..24
12.0±0.2
Features 1) Cathode common dual type 2) High reliability 3) Low VF
1.2 1.3 0.8
1
5.0±0.2
8.0±0.2
2.6±0.5
14.0±0.5
Construction Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
0.75±00..015
1 : Manufacture date
(1) (2) (3) Anode Cathode Anode
Package Dimensions (Unit : mm)
7
540
34.5
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM VR Io IFSM
Operating Junction Temperature Storage Temperature
Tj Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load, IO/2 per diode, Tc=95°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
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Limits Unit 40...
