Schottky Barrier Diode
RBR20T60ANZ
lApplication Switching power supply
lDimensions (Unit : mm)
10.0±00..31
φ3.2±0.2
...
Schottky Barrier Diode
RBR20T60ANZ
lApplication Switching power supply
lDimensions (Unit : mm)
10.0±00..31
φ3.2±0.2
4.5±00..31 2.8±00..21
lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF
lConstruction Silicon epitaxial planar type
①
1.2 1.3 0.8
(1) (2) (3)
2.45±0.5 2.45±0.5
ROHM : TO-220FN
5.0±0.2 8.0±0.2
14.0±0.5
12.0±0.2
15.0±
0.4 0.2
2.6±0.5
0.75±00..015 1 Manufacture date
Data Sheet lStructure
(1) (2) (3) Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
34.5
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature Storage Temperature
VRM VR Io IFSM Tj Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load, IO/2 per diode, Tc=115°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
-
-
Limits Unit 60 V 60 V 20 A 100...
