Schottky Barrier Diode
RBR20T40ANZ
lApplication Switching power supply
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31...
Schottky Barrier Diode
RBR20T40ANZ
lApplication Switching power supply
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Data Sheet lStructure
15.0±00..24
12.0±0.2
lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF
1.2 1.3 0.8
1
lConstruction Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
5.0±0.2
8.0±0.2
14.0±0.5
2.6±0.5
0.75±00..015 ROHM : TO220FN
1 Manufacture date
(1) (2) (3) Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
34.5
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature Storage Temperature
VRM VR Io IFSM Tj Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load, IO/2 per diode, Tc=120°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
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-
Limits Unit 40 V 40 V 20 A 100 A...
