RBQ30TB45BNZ

Schottky Barrier Diode RBQ30TB45BNZ lApplication Switching power supply lDimensions (Unit : mm) 10.0±00..31 φ3.2±0.2 4.5±00..31 2.8±00..21 Data Sheet lStructure 0.4 0.2 15.0± 12.0±0.2 lFeatures 1) Power Mold Type 2) High reliability 3) Low IR lConstruction Silicon epitaxial planar type 5.0±0.2 8.0 1.6 MAX ① 14.0±0.5 1.2 1.3 0.8 (1) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN (2 pin) 2.6±0.5 0.75±00..015 1 Manufacture date (1) Cathode lPackage Dimensions (Unit : mm) 7 540 (3) Anode 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.5 Direct Reverse Voltage 60Hz half sin Wave, resistive load, Tc=100°C Max. 60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle - - Limits Unit 45 V 45 V 30 A 100 A 150 °C -55 to +150 °C ...