Schottky Barrier Diode
RBQ20T65ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) Hi...
Schottky Barrier Diode
RBQ20T65ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) High reliability
lConstruction Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
1 1.2
1.3 0.8
(1) (2) (3)
ROHM TO220FN 1 Manufacture Date
0.7±0.1 0.05
2.6±0.5
lPackage Dimensions (Unit : mm)
7 540
Anode Cathode Anode
Data Sheet lStructure
34.5
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
Forward current surge peak (60Hz・1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits 65 65 20 100 150
-40 to +150
Unit V V A A °C °C
lElectrical characteristics (Tj = 25°C) Parameter
Forward voltage Reverse current
Symbol Min. VF IR -
Typ. Max. - 0.69 - 300
Unit Conditions ...
