Document
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP290
TLP290
Programmable Controllers AC/DC-Input Module Hybrid ICs
Unit: mm
TLP290 consist of photo transistor, optically coupled to two infrared emitting diodes connected inverse parallel, and can operate directly by AC input current Since TLP290 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
• Collector-Emitter voltage : 80 V (min)
• Current transfer ratio
: 50% (min)
Rank GB
: 100% (min)
• Isolation voltage
: 3750 Vrms (min)
• Guaranteed performance over : -55 to 110 ˚C
• UL-recognized
: UL 1577, File No.E67349
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
• cUL-recognized
: CSA Component Acceptance Service No.5A
Pin Configuration
• VDE-approved • CQC-approved
File No.67349 : EN 60747-5-5, EN 62368-1 (Note 1) : GB4943.1, GB8898 Japan and Thailand Factory
TLP290
1
4
2
3
Note 1: When a VDE approved type is needed, please designate the Option(V4).
Construction Mechanical Rating
Creepage distance
: 5.0 mm (min)
Clearance
: 5.0 mm (min)
Insulation thickness
: 0.4 mm (min)
1: Anode Cathode
2: Cathode Anode
3: Emitter 4: Collector
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-02
2019-05-20
Current Transfer Ratio (Unless otherwise specified, Ta = 25°C)
TYPE TLP290
Classification (Note1)
Blank Rank Y Rank GR Rank BLL Rank GB
Current Transfer Ration (%) (IC / IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
Marking of Classification
50
400
Blank, YE, GR, B, GB
50
150
YE
100
300
GR
200
400
B
100
400
GB
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP290(GB,E Note: For safety standard certification, however, specify the part number alone.
(e.g.) TLP290(GB,E: TLP290
TLP290
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic
Symbol
Note
Rating
Unit
Detector
LE D
R.M.S. forward current Input forward current derating (Ta ≥ 90°C) Input forward current (pulsed) Input power dissipation Input power dissipation derating (Ta ≥ 90°C) Junction temperature Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Collector power dissipation derating (Ta ≥ 25°C) Junction temperature Operating temperature range Storage temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage
IF(RMS) ΔIF /ΔTa
IFP PD ΔPD/ΔTa Tj VCEO VECO IC PC ΔPC /ΔTa Tj Topr Tstg Tsol PT ΔPT /ΔTa BVS
(Note 2) (Note3)
±50 -1.5 ±1 100 -3.0 125 80
7 50 150 -1.5 125 -55 to 110 -55 to 125 260 (10 s) 200 -2.0 3750
mA mA /°C
A mW mW/°C °C
V V mA mW mW /°C °C °C °C °C mW mW /°C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and .