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BAT54T1G

ON Semiconductor

Schottky Barrier Diodes

Schottky Barrier Diodes BAT54T1G, SBAT54T1G These Schottky barrier diodes are designed for high speed switching applicat...


ON Semiconductor

BAT54T1G

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Description
Schottky Barrier Diodes BAT54T1G, SBAT54T1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Case VR PF RqJL 30 V 400 mW 4.0 mW/°C 174 °C/W Thermal Resistance, Junction−to−Ambient RqJA 492 °C/W Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current IFSM 600 mA tp < 10 msec Repetitive Peak Forward Current IFRM 300 mA Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature TJ −55 to 125 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. DATA...




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