Document
Schottky Barrier Diode
RB238T150NZ
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common type 2) High reliability 3) Super low IR
lConstruction Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3 0.1
f3.2±0.2
2.8±00..21
lStructure
0.4 0.2
15.0±
12.0±0.2
1
1.2 1.3 0.8
5.0±0.2
8.0±0.2
(1) (2) (3) Anode Cathode Anode
2.6±0.5
14.0±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±00..015
ROHM : TO220FN 1 : Manufacture Date
lPackage Dimensions (Unit : mm)
7 540
34.5
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
150 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load,Tc=85ºC Max., IO/2 per diode 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
.