RB238T150FH

Schottky Barrier Diode RB238T150FH Application Switching power supply Dimensions (Unit : mm) 4.5±00..31 Datasheet AEC-Q101 Qualified Structure Features 1) Cathode common type 2) High reliability 3) Super low IR 10.0± 0.3 0.1 3.2±0.2 12.0±0.2 1 1.2 15.0± 0.4 0.2 2.8±00..21 (1) (2) (3) Anode Cathode Anode 5.0±0.2 8.0±0.2 14.0±0.5 Construction Silicon epitaxial planar type 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 150 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load,Tc=85ºC Max., IO/2 per diode 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode Operating junction temperature Tj - 150 40 100 1...