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RB228T-40NZ

ROHM

Schottky Barrier Diode

Schottky Barrier Diode RB228T-40NZ Application Switching power supply Dimensions (Unit : mm) Features 1) Cathode c...


ROHM

RB228T-40NZ

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Schottky Barrier Diode RB228T-40NZ Application Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=100ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode - - 45 V 40 V 30 A 100 A 150 °C 55 to 150 °C Electrical and Thermal Characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) IF=15A VR=40V Junction to case - - 0.77 V - - 10 A - - 2 °C/W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/3 2017.07 - Rev.B RB228T-40NZ Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF (A) 100 10 Tj = 150°C 1 Tj = 125°C 0.1 0.01 Tj = 75°C Tj = 25°C Tj = 25°C 0.001 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR (A) 10000 1000 Tj = 150°C 100 ...




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