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TPC8105-H

Toshiba Semiconductor
Part Number TPC8105-H
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2017
Detailed Description TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8105−H High Speed and High...
Datasheet PDF File TPC8105-H PDF File

TPC8105-H
TPC8105-H

Overview
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switching l Small gate charge : Qg = 32 nC (typ.
) l Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 12 S (typ.
) l Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) l Enhancement−mode : Vth = −0.
8~−2.
0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage ...


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