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HCTS20MS

Part Number	HCTS20MS
Manufacturer	Intersil
Description	Radiation Hardened Dual 4-Input NAND Gate
Features	• 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Singl...
Published	Mar 30, 2017
Datasheet	HCTS20MS PDF File

Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >10...

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HCTS20MS Radiation Hardened Dual 4-Input NAND Gate - Intersil

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