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WTPB8A60CW

WINSEMI SEMICONDUCTOR

Bi-Directional Triode Thyristor

www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-...


WINSEMI SEMICONDUCTOR

WTPB8A60CW

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www.DataSheet.in WTPB8A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A ■ High Commutation dV/dt. General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IFGM VRGM TJ, Tstg Parameter Peak Repetitive Forward Blocking Voltage(gate open) (Note 1) Forward Current RMS (All Conduction Angles, Tc=58℃) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (t p= 10 ms) Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) Average Gate Power — Forward, (Over a...




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