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RB215T-40NZ

ROHM

Schottky Barrier Diode

Schottky barrier diode RB215T-40NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode ...


ROHM

RB215T-40NZ

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Description
Schottky barrier diode RB215T-40NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type.(TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar 215 4 Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) VRM VR Io Forward current surge peak (60Hz/1cyc) (*1) Junction temperature IFSM Tj Storage temperature Tstg (*1)Business frequencies, 1/2 Io per diode, Tc=121C Limits 45 40 20 100 150 40 to 150 Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. - - 0.55 - - 500 - - 1.75 Unit V V A A C C Unit V μA C/W Conditions IF=10A VR=40V junction to case www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/3 2016.09...




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