RB168VAM100
Schottky Barrier Diode
●Outline
VR 100 V
Io 1 A
IFSM 5 A
...
RB168VAM100
Schottky Barrier Diode
●Outline
VR 100 V
Io 1 A
IFSM 5 A
●Features High reliability Small mold type Super low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm) Basic Ordering Unit(pcs)
8 3000
Silicon epitaxial planar
Taping Code
TR
Marking
63
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
Average rectified forward current
VRM VR
Io
Duty≦0.5
Reverse direct voltage
Glass epoxy mounted、 60Hz half sin waveform、resistive load、
Tc=100℃ Max.
100 100
1
V V
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
5
A
Junction temperature Storage temperature
Tj Tstg -
150 -55 ～ 150
℃ ℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Forward voltage
VF IF=1A
Reverse current
IR VR=100V
Min. Typ. Max. Unit - - 0.84 V - - 0.3 μA
Attention
www.rohm.com © 2016 ROHMCo., Ltd.All rights reserved.
1/5
2017/05/16_Rev.001
RB168VAM100
●Characteristic Curves
Data sheet
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