Document
Schottky Barrier Diode
RB168L-30
Application General rectification
Dimensions (Unit : mm)
2.6±0.15
Datasheet
Land Size Figure (Unit : mm)
2.0
4.5±0.2 1.2±0.3
5.0±0.3
2.0 4.2
Features 1) Small power mold type
(PMDS) 2) High reliability 3) Super low IR
Construction Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS JEDEC : SOD-106
1 2 : Manufacture Date
Taping Dimensions (Unit : mm)
2.0±0.05 4.0±0.1
PMDS
Structure
φ11..5555±00..0055
Cathode
Anode
0.3
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, Tc=125ºC Max. 60Hz half sin wave, 1cycle, n.