Document
RB088B150
Data Sheet
Schottky Barrier Diode
RB088B150
lApplications Switching power supply
lFeatures 1)Cathode common dual type 2)Low IR 3)High reliability 4)AEC-Q101 qualified
lConstruction Silicon epitaxial
lExternal Dimensions(Unit : mm)
C0.5
6.5±0.2
5.1±0.2 0.1
2.3±0.2 0.1
0.5±0.1
lLand Size Figure(Unit : mm) 6.0
5.5±0. 1.5±0.3 3
0.8 min 2.5 9.5±0.5
3.0 2.0 6.0
1
0.9 (1) (2) (3)
0.75 0.65±0.1
2.3±0.2 2.3±0.2
ROHM : CPD JEITA : SC-63
1 Manufacture
0.5±0.1 1.0±0.2
1.6 1.6
CPD 2.3 2.3
lStructure
lTaping Dimensions(Unit : mm)
2.0±0.05 4.0±0.1
8.0±0.1
φ 1.55±0.1 0
0.4±0.1
2.5±0.1
TL
10.1±0.1
16.0±0.2
10.1±0.1 13.5±0.2
7.5±0.05
0~0.5
6.8±0.1
8.0±0.1
φ 3.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive) Reverse voltage (DC)
VRM 150 VR 150
Average rectified forward current (*1)
Io
10
Forward current surge peak (60Hz・1cyc)(*2)
IFSM
50
Junction temperature
Tj.