WFD7N65S

WFD7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Pulse Avalanche Current 1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature Is Continuous diode forward current Is,pulse Diode pulse current Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.IAS=2.5,VDD=60V,R G=25Ω ,Starting T...