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BSO612CVG

Part Number	BSO612CVG
Manufacturer	Infineon
Description	Small-Signal-Transistor
Published	Mar 24, 2017
Detailed Description	Rev. 2.1 BSO 612 CV G SIPMOS® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancemen...
Datasheet	BSO612CVG PDF File

Overview

Rev.
2.
1 BSO 612 CV G SIPMOS® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current · Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.
12 3 P -60 V 0.
3 W -2 A Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse WID = 3 A, VDD = 25 V, RGS = 25 WID = -2 A, VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, Tjmax = 150 °C ...

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BSO612CVG Small-Signal-Transistor - Infineon

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