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BSO220N03MDG Dataheets PDF



Part Number BSO220N03MDG
Manufacturers Infineon
Logo Infineon
Description Power-MOSFET
Datasheet BSO220N03MDG DatasheetBSO220N03MDG Datasheet (PDF)

BSO220N03MD G OptiMOS™3 M-Series Power-MOSFET Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified for consumer level application Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 22 27 7.7 PG-DSO-8 V mΩ A • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-2.

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BSO220N03MD G OptiMOS™3 M-Series Power-MOSFET Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified for consumer level application Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 22 27 7.7 PG-DSO-8 V mΩ A • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSO220N03MD G Package PG-DSO-8 Marking 220N03MD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C Value Unit 10 secs steady state 7.7 6 A 5.3 4.4 6.9 5.8 V GS=4.5 V, T A=90 °C Pulsed drain current2) I D,pulse T A=25 °C Avalanche current, single pulse3) I AS T A=25 °C Avalanche energy, single pulse E AS I D=7.7.


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