Features
� 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V � Ultra-low Gate Charge(Typical 45nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFP640
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This l...
