WFP540

Features □ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V □ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC) □ Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Parameter ID IDM VGS EAS EAR dv/dt Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv ...