WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designe...
