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WFF18N50 Dataheets PDF



Part Number WFF18N50
Manufacturers Winsemi
Logo Winsemi
Description Silicon N-Channel MOSFET
Datasheet WFF18N50 DatasheetWFF18N50 Datasheet (PDF)

WFF18N50 Product Description Silicon N-Channel MOSFET Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsui.

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WFF18N50 Product Description Silicon N-Channel MOSFET Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Fa.


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